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FDS8984_F085 N-Channel PowerTrench(R) MOSFET
Fabruary 2010
N-Channel PowerTrench(R) MOSFET
30V, 7A, 23m General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
FDS8984_F085
tm
Features
Max rDS(on) = 23m, VGS = 10V, ID = 7A Max rDS(on) = 30m, VGS = 4.5V, ID = 6A Low gate charge 100% RG tested Qualified to AEC Q101 RoHS Compliant
D1 D
D1 D
DD2 D2 D
5 6 Q2
4 3 2 Q1 1
SO-8
Pin 1 SO-8
G2 S2 G G1 S S1 S
7 8
S
MOSFET Maximum Ratings TA = 25C unless otherwise noted
Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous Pulsed Single Pulse Avalache Energy Power Dissipation for Single Operation Derate above 25C Operating and Storage Temperature (Note 2) (Note 1a) Ratings 30 20 7 30 32 1.6 13 -55 to 150 Units V V A A mJ W mW/C C
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 C/W C/W
Package Marking and Ordering Information
Device Marking FDS8984 Device FDS8984_F085 Package SO-8 Reel Size 330mm Tape Width 12mm Quantity 2500 units
(c)2010 Fairchild Semiconductor Corporation FDS8984_F085 Rev. A
1
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FDS8984_F085 N-Channel PowerTrench(R) MOSFET
Electrical Characteristics TJ = 25C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25C VDS = 24V VGS = 0V TJ = 125C 30 23 1 250 100 V mV/C A nA
VGS = 20V,VDS = 0V
On Characteristics (Note 3)
VGS(th) VGS(th) TJ rDS(on) Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VDS = VGS, ID = 250A ID = 250A, referenced to 25C VGS = 10V, ID = 7A Drain to Source On Resistance VGS = 4.5V, ID = 6A VGS = 10V, ID = 7A, TJ = 125C 1.2 1.7 - 4.3 19 24 26 23 30 32 m 2.5 V mV/C
Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15V, VGS = 0V, f = 1.0MHz f = 1MHz 475 100 65 0.9 635 135 100 1.6 pF pF pF
Switching Characteristics (Note 3)
td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 15V, VGS = 10V, ID = 7A VDS = 15V, VGS = 5V, ID = 7A VDD = 15V, ID = 7A VGS = 10V, RGS = 33 5 9 42 21 9.2 5.0 1.5 2.0 10 18 68 34 13 7 ns ns ns ns nC nC nC nC
Drain-Source Diode Characteristics
VSD trr Qrr Source to Drain Diode Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge ISD = 7A ISD = 2.1A IF = 7A, di/dt = 100A/s 0.9 0.8 1.25 1.0 33 20 V V ns nC
Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 78C/W when mounted on a 0.5in2 pad of 2 oz copper
b) 125C/W when mounted on a 0.02 in2 pad of oz copper
c) 135C/W when mounted on a minimun pad
Scale 1 : 1 on letter size paper 2: Starting TJ = 25C, L = 1mH, IAS = 8A, VDD = 27V, VGS = 10V. 3: Pulse Test:Pulse Width <300s, Duty Cycle <2%.
FDS8984_F085 Rev. A
2
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FDS8984_F085 N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ
30
= 25C unless otherwise noted
3.0
ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
VGS=10V PULSE DURATION =80S DUTY CYCLE =0.5% MAX VGS=5.0V VGS=3.5V VGS=4.5V VGS=4.0V VGS=3.0V
DRAIN-SOURCE ON-RESISTANCE
2.5
PULSE DURATION =80S DUTY CYCLE =0.5% MAX
20
VGS=3.0V VGS=3.5V VGS=4.0V VGS=4.5V
2.0
10
1.5
1.0
VGS=5.0V
0.5
VGS=10V 25 30
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5
10
15
20
Figure 1. On Region Characteristics
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance vs Drain Current and Gate Voltage
60 55 50 45 40 35 30 25 20 15 2
TJ = 25oC TJ = 125oC ID = 7A
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
1.4 1.2 1.0 0.8 0.6 -80
ID = 7A VGS = 10V
RDS(on), DRAIN TO SOURCE ON-RESISTANCE (mOHM)
1.6
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
4 6 8 VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On Resistance vs Temperature
Figure 4. On-Resistance vs Gate to Source Votlage
30 IS, REVERSE DRAIN CURRENT (A)
30 ID, DRAIN CURRENT (A) 25 20 15 10 5 0
PULSE DURATION =80S DUTY CYCLE =0.5% MAX
10
VGS = 0V
VDD = 5V TJ = 150 C
O
1
TJ = 150oC
TJ = 25oC
0.1
TJ = -55oC
TJ = 25 C TJ = - 55 C
O
O
0.01
1
2 3 VGS, GATE TO SOURCE VOLTAGE (V)
4
1E-3 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
FDS8984_F085 Rev. A
3
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FDS8984_F085 N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ
VGS, GATE TO SOURCE VOLTAGE(V)
= 25C unless otherwise noted
700 600
CISS
10 8
CAPACITANCE (pF)
6 4 2 0
VDD = 10V
VDD = 15V
500 400 300 200 100
f = 1MHz VGS = 0V
VDD = 20V
COSS
CRSS
1 10 30
0
2
4 6 Qg, GATE CHARGE(nC)
8
10
0.1
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
20
Figure 8. Capacitance vs Drain to Source Voltage
8
IAS, AVALANCHE CURRENT (A)
10 STARTING TJ = 25 C
O
ID, DRAIN CURRENT (A)
7 6 5 4 3 2 1
VGS=4.5V VGS=10V
STARTING TJ = 125 C 1 0.01 0.1 1 10
20
O
0 25
50
75
100
125
o
150
tAV, TIME IN AVALANCHE (mS)
TA, AMBIENT TEMPERATURE ( C)
Figure 9. Unclamped Inductive Switching Capability
100
ID, DRAIN CURRENT (A)
10us
Figure 10. Maximum Continuous Drain Current vs Ambient Temperature
3000 1000
TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS:
10
100us
P(PK), PEAK TRANSIENT POWER (W)
1
OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on)
1ms 10ms 100ms 1s DC
100
VGS=10V
I = I25
150 - T A ----------------------125
0.1
10
SINGLE PULSE
0.01 0.1
SINGLE PULSE TJ = MAX RATED TA = 25oC
1 10 VDS, DRAIN TO SOURCE VOLTAGE (V)
100
1 -5 10
10
-4
10
-3
10 10 10 10 t, PULSE WIDTH (s)
-2
-1
0
1
10
2
10
3
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
FDS8984_F085 Rev. A
4
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FDS8984_F085 N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ
2 1
= 25C unless otherwise noted
DUTY CYCLE - DESCENDING ORDER
D = 0.5 0.2 0.1 0.05 0.02 0.01
Normalized Thermal Impedance ZJA
0.1
0.01
PDM
t1
1E-3
SINGLE PULSE
t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA
1E-4 -5 10
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t, RECTANGULAR PULSE DURATION(s)
Figure 13. Transient Thermal Response Curve
FDS8984_F085 Rev. A
5
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FDS8984_F085 N-Channel PowerTrench(R) MOSFET
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPowerTM FRFET(R) PowerTrench(R) The Power Franchise(R) (R) Auto-SPMTM Global Power ResourceSM PowerXSTM Programmable Active DroopTM Green FPSTM Build it NowTM QFET(R) Green FPSTM e-SeriesTM CorePLUSTM TinyBoostTM QSTM GmaxTM CorePOWERTM TinyBuckTM Quiet SeriesTM GTOTM CROSSVOLTTM TinyCalcTM RapidConfigureTM IntelliMAXTM CTLTM TinyLogic(R) ISOPLANARTM Current Transfer LogicTM TM TINYOPTOTM (R) MegaBuckTM DEUXPEED TinyPowerTM Dual CoolTM Saving our world, 1mW/W/kW at a timeTM MICROCOUPLERTM TinyPWMTM EcoSPARK(R) SignalWiseTM MicroFETTM TinyWireTM EfficentMaxTM SmartMaxTM MicroPakTM TriFault DetectTM SMART STARTTM MicroPak2TM (R) TRUECURRENTTM* SPM(R) MillerDriveTM SerDesTM STEALTHTM MotionMaxTM Fairchild(R) SuperFETTM Motion-SPMTM Fairchild Semiconductor(R) SuperSOTTM-3 OptiHiTTM FACT Quiet SeriesTM UHC(R) SuperSOTTM-6 OPTOLOGIC(R) FACT(R) (R) Ultra FRFETTM (R) OPTOPLANAR SuperSOTTM-8 FAST (R) UniFETTM SupreMOSTM FastvCoreTM VCXTM SyncFETTM FETBenchTM VisualMaxTM Sync-LockTM FlashWriter(R) * PDP SPMTM XSTM (R)* FPSTM Power-SPMTM F-PFSTM
tm
tm
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Rev. I47
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
FDS8984_F085 Rev. A
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